PART |
Description |
Maker |
HL6339G |
(HL6342G) 633nm Lasing Laser Diode
|
Hitachi
|
ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE 1553 nm, LASER DIODE 1558 nm, LASER DIODE 1544 nm, LASER DIODE InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制 InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制 1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE 785 nm, LASER DIODE 807 nm, LASER DIODE 798 nm, LASER DIODE
|
|
NDL7910PC NDL7603P NDL7910P |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION 1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS Optical Fiber Communication Laser Diode(光纤通信激光二极管)
|
NEC[NEC] NEC Corp.
|
NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
LT050MS LT050PS |
Compact Laser Diode for DVD(635nm-5mW) Red Laser Diode
|
SHARP[Sharp Electrionic Components]
|
DL-3150-101 DL-3150-102 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
DL-3149-054 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|